Bd243c npn datasheet

Bd243c npn datasheet

BD243, BD243A, BD243B, BD243C NPN SILICON POWER , Collector-emitter breakdown voltage BD243A IB = 0 (see Note 5) MAX 60 BD243B 80 BD243C, , BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM , BD243A BD243B BD243C E T E L O S B O 0·01 1·0 10 100 1000 VCE -

BD243C: Complementary Silicon Plastic Power Transistors: Bourns Electronic Solut... BD243C: Designed for Complementary Use with the BD244 Series: New Jersey Semi-Conduct... BD243C: Silicon NPN Power Transistor: Mospec Semiconductor: BD243C: POWER TRANSISTORS(6A,65W) ON Semiconductor: BD243C: POWER TRANSISTORS COMPLEMENTARY SILICON: STMicroelectronics: BD243C ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD135/137/139 1 TO-126 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Compare pricing for STMicroelectronics BD243C across 13 distributors and discover alternative parts, CAD models, technical specifications, datasheets, and more on Octopart. Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.electrical characteristics at 25°C case temperature datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors.

Aug 02, 2019 · BD243C: 6.0 A, 100 V NPN Bipolar Power Transistor Upon the effective date of termination of this Agreement, all licenses granted to Licensee hereunder shall terminate and Licensee shall cease all use, copying, modification and distribution of the Content and shall promptly either destroy or return to ON Semiconductor all copies of the Content ...

BD243C BD244C Complementary power transistors Features Complementary NPN-PNP devices Applications Power linear and switching Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD244C.. bd243c bd244c.pdf Size:341K _st. BD243C BD244C Complementary power transistors . Features Complementary NPN-PNP devices Applications Power linear and switching 3 2 1 Description TO-220 The device is manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain performance Figure 1. BD243C: Complementary Silicon Plastic Power Transistors: Bourns Electronic Solut... BD243C: Designed for Complementary Use with the BD244 Series: New Jersey Semi-Conduct... BD243C: Silicon NPN Power Transistor: Mospec Semiconductor: BD243C: POWER TRANSISTORS(6A,65W) ON Semiconductor: BD243C: POWER TRANSISTORS COMPLEMENTARY SILICON: STMicroelectronics: BD243C

Characteristics of the BD243C bipolar transistor. Type - NPN. Collector-Emitter Voltage: 100 V. Collector-Base Voltage: 100 V. Emitter-Base Voltage: 5 V. Collector Current: 6 A. Collector Dissipation - 65 W. Characteristics of the BD243C bipolar transistor. Type - NPN. Collector-Emitter Voltage: 100 V. Collector-Base Voltage: 100 V. Emitter-Base Voltage: 5 V. Collector Current: 6 A. Collector Dissipation - 65 W.

Oct 01, 2018 · Licensee agrees that the delivery of any Bd243c datasheet does not bd243c datasheet a sale and the Software gd243c only bd243c datasheet. Pb-Free Packages are Available. Nothing in this Agreement bd243c datasheet be construed as creating a joint venture, agency, partnership, trust or other similar association of any kind between the parties hereto. Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.electrical characteristics at 25°C case temperature datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS PRODUCT INFORMATION TO-220 3-pin plastic flange-mount packag e This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance Text: BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with , Ptot ½LIC2 Tstg TL Tj Ptot IB IC V V A A A 90 V UNIT BD243C Collector-emitter voltage (IC = 30 mA) Emitter-base voltage BD243A BD243 BD243B BD243C BD243B Continuous collector current Continuous , transistor to operate safely in a circuit of ... BD243B NPN Epitaxial Silicon Transistor . Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage : BD243C VCEO Collector-Emitter Voltage : BD243C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector

BD243C datasheet, BD243C pdf, datasheet, datas sheet, fiche technique, datasheets, fiches techniques, pdf, USHA India LTD, Un transistor NPN de puissance NPN plastique de silicium. Conçu pour une utilisation dans les applications de commutation et d'amplification d'usage général. BD243, BD243A, BD243B, BD243C NPN SILICON POWER , Collector-emitter breakdown voltage BD243A IB = 0 (see Note 5) MAX 60 BD243B 80 BD243C, , BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM , BD243A BD243B BD243C E T E L O S B O 0·01 1·0 10 100 1000 VCE - Compare pricing for STMicroelectronics BD243C across 13 distributors and discover alternative parts, CAD models, technical specifications, datasheets, and more on Octopart.

Jun 25, 2019 · BD243C Datasheet, Equivalent, Cross Reference Search If you agree to this Agreement on behalf of a company, you represent and warrant that you have authority to bind such company to this Agreement, and your agreement to these terms will be regarded as the agreement of such company. BD243, BD243A, BD243B, BD243C NPN SILICON POWER , Collector-emitter breakdown voltage BD243A IB = 0 (see Note 5) MAX 60 BD243B 80 BD243C, , BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM , BD243A BD243B BD243C E T E L O S B O 0·01 1·0 10 100 1000 VCE -

Characteristics of the BD243C bipolar transistor. Type - NPN. Collector-Emitter Voltage: 100 V. Collector-Base Voltage: 100 V. Emitter-Base Voltage: 5 V. Collector Current: 6 A. Collector Dissipation - 65 W.

bd243c bd244c.pdf Size:341K _st. BD243C BD244C Complementary power transistors . Features Complementary NPN-PNP devices Applications Power linear and switching 3 2 1 Description TO-220 The device is manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain performance Figure 1. bd243c datasheet pdf,the appliction notes, circuit diagram, schematic circuits,voltage, pin, pinout, output for bd243c as well as the tutorial, equivalent spec on bd243c.

Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a ... bd243c datasheet pdf,the appliction notes, circuit diagram, schematic circuits,voltage, pin, pinout, output for bd243c as well as the tutorial, equivalent spec on bd243c.

BD243C datasheet, BD243C datasheets, BD243C pdf, BD243C circuit : SAVANTIC - Silicon NPN Power Transistors ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. BD243B NPN Epitaxial Silicon Transistor . Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage : BD243C VCEO Collector-Emitter Voltage : BD243C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector The BD243C is a NPN plastic high power Bipolar Transistor, used for general purpose amplifier and switching applications. 1.92°C/W Junction to Case Thermal Resistance Multicomp products are rated 4.6 out of 5 stars